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Quasi-relativism, the narrow-gap property, and forced electron dynamics in solids. (English. Russian original) Zbl 1031.82056

Theor. Math. Phys. 131, No. 1, 506-515 (2002); translation from Teor. Mat. Fiz. 131, No. 1, 72-83 (2002).
Summary: Narrow-gap semiconductors, used in quantum network engineering, are characterized by small effective electron masses on the Fermi level and hence by high electron mobility in the lattice. We construct an explicitly solvable model that clarifies one possible mechanism for small effective masses to appear. Another mathematical model constructed here describes a possible mechanism for using a traveling wave to control an alternating quantum current in a one-dimensional lattice.

MSC:

82D37 Statistical mechanics of semiconductors
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