Some aspects of semiconductor device simulation. (English) Zbl 0677.65125

Smith, R. K.; Coughran, W. M. jun.; Fichtner, W.; Rose, D. J.; Bank, R. E.

Computing methods in applied sciences and engineering VII, Proc. 7th Int. Symp., Versailles/France 1985, 3-12 (1986).

Summary: [For the entire collection see Zbl 0651.00020.]
We present the basic physical equations that model the transient and steady-state behavior of mobile carriers in semiconductor devices. We also describe the time-stepping algorithm used in transient simulations, and we outline the principles of using continuation methods in steady- state calculations.

MSC:

65Z05	Applications to the sciences
65N40	Method of lines for boundary value problems involving PDEs
65L05	Numerical methods for initial value problems
65H10	Numerical computation of solutions to systems of equations
78A55	Technical applications of optics and electromagnetic theory
35Q99	Partial differential equations of mathematical physics and other areas of application

Keywords:

transient and steady-state behavior; semiconductor devices; time-stepping algorithm; transient simulations; continuation methods