Busenberg, Stavros; Fang, Weifu Identification of semiconductor contact resistivity. (English) Zbl 0749.35062 Q. Appl. Math. 49, No. 4, 639-649 (1991). The authors consider the identification of the contact resistivity in a semiconductor device, given the contact window, the applied current density at the boundary and the resulting voltage in one boundary point. Mathematically, this is an inverse problem for a linear two-dimensional elliptic equation with Neumann boundary conditions.The authors investigate smoothness properties of the solution operator (parameter-to-data-operator), analyse a commonly used formula for the contact resistivity and finally solve the inverse problem by Newton’s method. Reviewer: G.Bruckner (Berlin) Cited in 9 Documents MSC: 35R30 Inverse problems for PDEs 35Q60 PDEs in connection with optics and electromagnetic theory 35J25 Boundary value problems for second-order elliptic equations 78A35 Motion of charged particles Keywords:elliptic equation; Neumann boundary conditions; smoothness properties of the solution operator; Newton’s method PDFBibTeX XMLCite \textit{S. Busenberg} and \textit{W. Fang}, Q. Appl. Math. 49, No. 4, 639--649 (1991; Zbl 0749.35062) Full Text: DOI