Simulation of the transient behavior of a one-dimensional semiconductor device. (English) Zbl 0625.65123

Douglas, Jim jun.; Martínez-Gamba, Irene; Squeff, M. Cristina J.

Mat. Apl. Comput. 5, 103-122 (1986).

A numerical method based on treating the potential by mixed finite elements and the electron and hole density equations by a finite element version of a modification of the method of characteristics is introduced to simulate the transient behavior of a semiconductor device. Error estimates are derived for a single space variable model.

MSC:

65Z05	Applications to the sciences
65M60	Finite element, Rayleigh-Ritz and Galerkin methods for initial value and initial-boundary value problems involving PDEs
65M25	Numerical aspects of the method of characteristics for initial value and initial-boundary value problems involving PDEs
35Q99	Partial differential equations of mathematical physics and other areas of application
65M15	Error bounds for initial value and initial-boundary value problems involving PDEs
78A35	Motion of charged particles
78A55	Technical applications of optics and electromagnetic theory

Keywords:

mixed finite elements; method of characteristics; semiconductor device; Error estimates