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Simulation of the transient behavior of a one-dimensional semiconductor device. (English) Zbl 0625.65123
A numerical method based on treating the potential by mixed finite elements and the electron and hole density equations by a finite element version of a modification of the method of characteristics is introduced to simulate the transient behavior of a semiconductor device. Error estimates are derived for a single space variable model.

MSC:
65Z05 Applications to the sciences
65M60 Finite element, Rayleigh-Ritz and Galerkin methods for initial value and initial-boundary value problems involving PDEs
65M25 Numerical aspects of the method of characteristics for initial value and initial-boundary value problems involving PDEs
35Q99 Partial differential equations of mathematical physics and other areas of application
65M15 Error bounds for initial value and initial-boundary value problems involving PDEs
78A35 Motion of charged particles
78A55 Technical applications of optics and electromagnetic theory
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