Douglas, Jim jun.; Martínez-Gamba, Irene; Squeff, M. Cristina J. Simulation of the transient behavior of a one-dimensional semiconductor device. (English) Zbl 0625.65123 Mat. Apl. Comput. 5, 103-122 (1986). A numerical method based on treating the potential by mixed finite elements and the electron and hole density equations by a finite element version of a modification of the method of characteristics is introduced to simulate the transient behavior of a semiconductor device. Error estimates are derived for a single space variable model. Cited in 1 ReviewCited in 11 Documents MSC: 65Z05 Applications to the sciences 65M60 Finite element, Rayleigh-Ritz and Galerkin methods for initial value and initial-boundary value problems involving PDEs 65M25 Numerical aspects of the method of characteristics for initial value and initial-boundary value problems involving PDEs 35Q99 Partial differential equations of mathematical physics and other areas of application 65M15 Error bounds for initial value and initial-boundary value problems involving PDEs 78A35 Motion of charged particles 78A55 Technical applications of optics and electromagnetic theory Keywords:mixed finite elements; method of characteristics; semiconductor device; Error estimates PDF BibTeX XML Cite \textit{J. Douglas jun.} et al., Mat. Apl. Comput. 5, 103--122 (1986; Zbl 0625.65123)