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An iterative method for the numerical solution of the semiconductor plasma equations. (English. Russian original) Zbl 0786.65112
Comput. Math. Math. Phys. 32, No. 11, 1605-1615 (1992); translation from Zh. Vychisl. Mat. Mat. Fiz. 32, No. 11, 1778-1789 (1992).
Summary: The numerical modelling of two-dimensional stationary processes of the transport of charge carriers in a semiconductor structure is investigated. An iterative algorithm is described, based on the use of an approximate factorization method for the simultaneous solution of the complete system of equations in the drift-diffusion approximation. The results demonstrate the effectiveness of the method in cases where the equations are strongly coupled.
65Z05 Applications to the sciences
35Q60 PDEs in connection with optics and electromagnetic theory
78A35 Motion of charged particles
76X05 Ionized gas flow in electromagnetic fields; plasmic flow