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Hierarchical device simulation. The Monte-Carlo perspective. (English) Zbl 1107.82301
Computational Microelectronics. Wien: Springer (ISBN 3-211-01361-X/hbk). xvi, 254 p. (2003).
Publisher’s description: This monograph is intended for scientists and TCAD engineers who are interested in physics-based simulation of Si and SiGe devices. The common theoretical background of the drift-diffusion, hydrodynamic, and Monte-Carlo models and their synergy are discussed and it is shown how these models form a consistent hierarchy of simulation tools. The basis of this hierarchy is the full-band Monte-Carlo device model which is discussed in detail, including its numerical and stochastic properties. The drift-diffusion and hydrodynamic models for large-signal, small-signal, and noise analysis are derived from the Boltzmann transport equation in such a way that all transport and noise parameters can be obtained by Monte-Carlo simulations. With this hierarchy of simulation tools the device characteristics of strained Si MOSFETs and SiGe HBTs are analysed and the accuracy of the momentum-based models is assessed by comparison with the Monte-Carlo device simulator.

MSC:
82-08 Computational methods (statistical mechanics) (MSC2010)
82-02 Research exposition (monographs, survey articles) pertaining to statistical mechanics
82C80 Numerical methods of time-dependent statistical mechanics (MSC2010)
82D37 Statistical mechanics of semiconductors
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