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Research on parallel finite element methods for the drift-diffusion model in semiconductor device simulations. (Chinese. English summary) Zbl 1463.65311

Summary: In this paper, we propose a novel 3D adaptive upwind stabilized finite element method (SUPG-IP), and perform a study to compare several parallel finite element methods for semiconductor device simulations. Numerical results show that the stabilized finite element methods are applicable to problems with large biases and high doping concentrations, while the classic Zlamal finite element method is more suitable for calculation of electrical characteristics of devices. Based on the three-dimensional parallel adaptive finite element toolbox PHG, a Drift-Diffusion model solver, DevSim, for semiconductor device simulations is developed. It is applied to simulating several typical semiconductor devices. The results are consistent with those of the commercial software Sentaurus, which verifies the effectiveness of the algorithms. A large-scale numerical experiment of PN diode, with 800 million elements and 2048 MPI processes, is carried out, demonstrating good parallel scalability of the algorithms.

MSC:

65M60 Finite element, Rayleigh-Ritz and Galerkin methods for initial value and initial-boundary value problems involving PDEs
65Z05 Applications to the sciences
82D37 Statistical mechanics of semiconductors
65Y05 Parallel numerical computation
35Q81 PDEs in connection with semiconductor devices
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